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FCB36N60N Datasheet, Fairchild Semiconductor

FCB36N60N Datasheet, Fairchild Semiconductor

FCB36N60N

datasheet Download (Size : 205.76KB)

FCB36N60N Datasheet
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FCB36N60N mosfet equivalent, n-channel mosfet.

FCB36N60N

datasheet Download (Size : 205.76KB)

FCB36N60N Datasheet
1.0 · rating-1

Features and benefits


* RDS(on) = 81 mΩ (Typ.)@ VGS = 10 V, ID = 18 A
* Ultra low gate charge (Typ. Qg = 86 nC)
* Low effective output capacitance (Typ. Coss.eff = 361 pF)
* 10.

Application

such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Applications
* Solar .

Description

The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiate it from the conventional MOSFETs. This advanced technology and precise process.

Image gallery

FCB36N60N Page 1 FCB36N60N Page 2 FCB36N60N Page 3

TAGS

FCB36N60N
N-Channel
MOSFET
Fairchild Semiconductor

Manufacturer


Fairchild Semiconductor

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